Founded in 2010 EpiGaN provides innovative GaN technology solutions to its global customer base. From its European headquarters and modern production site in Hasselt/Belgium the company offers early access to leading-edge GaN/Si and GaN/SiC epiwafer technology for next-generation power switching, RF power, and advanced sensor solutions. EpiGaN’s GaN technology is a key enabler for device innovation in consumer power supplies, electric vehicles, wireless charging and RF power systems for next-generation cellular infrastructures – 5G, IoT (Internet of Things), and smart sensor systems. The product spectrum ranges from application-specific standard epi-wafers of up to 200mm diameter to customized products utilizing the company’s differentiating GaN technology.
2011: Investors formed by Robert Bosch Venture Capital Capricorn CleanTech Fund and LRM2011: Participating in the EU-FP7 project HiPoSwitch2012: EpiGaN entered the Silicon 60, EE Times' list of emerging startup companies 2012: Demonstrated first 200mm SiN/AlGaN/GaN HEMT wafers2013: Demonstrated first 600V grounded 150 mm wafers2014: National Trends Gazelle Ambassador ’Starter’, Trends2014: Getting ready for ISO9001 certification, support growth
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